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CVD-SiC film manufacturing method and CVD-SiC film manufactured by the method

机译:CVD-SiC膜的制造方法以及通过该方法制造的CVD-SiC膜

摘要

Disclosed are a dense CVD-SiC film having few pores and a composite material, and a production method for efficiently producing such a CVD-SiC film. A CVD-SiC film manufacturing method using a CVD method in which a source gas is supplied and deposited on a substrate in a CVD furnace, and the CVD method is a photo-CVD method for irradiating a substrate with light. And the film-forming temperature (t [K]) and the total pressure (p [kPa]) satisfy | fill following formula (1), The manufacturing method of the CVD-SiC film | membrane characterized by the above-mentioned. p ≧ −0.04t + 72 (1) [Selection] FIG.
机译:公开了具有很少的孔和复合材料的致密的CVD-SiC膜,以及有效地生产这种CVD-SiC膜的生产方法。使用CVD法的CVD-SiC膜的制造方法,其中在CVD炉中将原料气体供给并沉积在基板上,并且该CVD法是用于向基板照射光的光CVD法。并且成膜温度(t [K])和总压力(p [kPa])满足填充下式(1),CVD-SiC膜的制造方法|膜的特征在于上述。 p≥-0.04t+ 72(1)[选择]

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