Metalorganic vapor phase deposition using solutions of alkyl-indium compounds in hydrocarbons

摘要

The present invention relates to a method for producing an indium-containing layer by metalorganic vapor phase deposition, wherein the indium-containing layer is produced on a substrate in a reaction chamber, the indium being in the form of an indium-containing precursor compound having the formula InR3. The radicals R that are delivered to the process and are independent of each other are selected from alkyl radicals with 1 to 6 carbon atoms, and the indium containing precursor compound is delivered in a solvent-containing solution, the indium containing precursor compound being The solvent dissolved therein is characterized by having at least one hydrocarbon having 1 to 8 carbon atoms. The invention also relates to a compound of the formula InR3, wherein R is independently selected from alkyl radicals having 1 to 6 carbon atoms and at least one hydrocarbon having 1 to 8 carbon atoms To the use of the solution to produce an indium-containing layer by metalorganic vapor phase deposition and to an apparatus for carrying out the method.