Laser lift-off on isolated III-nitride optical islands for inter-substrate LED transfer

摘要

A laser lift-off process is provided. The device layer may be provided on the transfer substrate. A channel through the device layer may be formed such that the devices, including the remainder of the device layer, are separated from each other laterally by the channel. The transfer substrate may be bonded to the target substrate through an adhesive layer. The surface portion of the device may be removed from the interface region between the transfer substrate and the device by irradiating the device with a laser beam through the transfer substrate. Laser irradiation decomposes the III-V compound semiconductor material. The channel provides an escape path for gas products (eg, nitrogen gas) generated by laser irradiation. The transfer substrate is separated from the bonded assembly including the target substrate and the rest of the device. The device may include a III-V compound semiconductor material. [Selection] Figure 36F