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Secondary battery protection circuit, secondary battery protection device, battery pack, and control method of secondary battery protection circuit

机译:二次电池保护电路,二次电池保护装置,电池组以及二次电池保护电路的控制方法

摘要

To prevent unintended operation of an NMOS transistor. A first NMOS transistor and a second NMOS transistor are inserted in series in a current path between a positive electrode of a secondary battery and a positive terminal connected to a power supply terminal of a load or a charger. A secondary battery protection circuit for protecting a secondary battery, wherein each input capacitance of a first NMOS transistor having a gate connected to a charge control terminal and a second NMOS transistor having a gate connected to a discharge control terminal A booster circuit that generates a control voltage boosted by using the drive circuit, a drive circuit that sets each output state of the charge control terminal and the discharge control terminal to a high level with the control voltage, and a detection state of the secondary battery The output state of the charge control terminal and the discharge control terminal from at least three states of high level, low level, and high impedance And a control circuit for selectively to the drive circuit based on the output state, the secondary battery protection circuit. [Selection] Figure 3
机译:防止NMOS晶体管意外操作。第一NMOS晶体管和第二NMOS晶体管串联插入在二次电池的正极与连接至负载或充电器的电源端子的正极端子之间的电流路径中。一种用于保护二次电池的二次电池保护电路,其中具有连接到充电控制端子的栅极的第一NMOS晶体管和具有连接到放电控制端子的栅极的第二NMOS晶体管的每个输入电容A产生控制的升压电路通过使用驱动电路升压的电压,利用控制电压将充电控制端子和放电控制端子的每个输出状态设置为高电平的驱动电路以及二次电池的检测状态端子和放电控制端子从高电平,低电平和高阻抗中的至少三个状态开始,以及基于输出状态选择性地向驱动电路,二次电池保护电路的控制电路。 [选择]图3

著录项

  • 公开/公告号JP6497475B1

    专利类型

  • 公开/公告日2019-04-10

    原文格式PDF

  • 申请/专利权人 ミツミ電機株式会社;

    申请/专利号JP20180162647

  • 发明设计人 武田 貴志;

    申请日2018-08-31

  • 分类号H02J7;H02H7/18;H02J7/34;H03K17/16;H03K17/687;H01M10/48;H01M10/44;

  • 国家 JP

  • 入库时间 2022-08-21 12:18:07

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