首页> 外国专利> Mesa shaped micro light emitting diode with electroless plated N-contact

Mesa shaped micro light emitting diode with electroless plated N-contact

机译:具有化学镀N触点的台面形微发光二极管

摘要

A method for fabricating a light emitting diode (LED) with a first electrical contact deposited around the side of a layered mesa structure. First, layers of materials are formed. The layers of materials include a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first and second semiconductor layers for producing light responsive to passing current through the light emitting layer. The formed layers of material are shaped to include a bottom surface, a top surface, and at least one side surface extending from the bottom surface to the top surface. The top surface has a smaller area than the bottom surface. An electrical contact is deposited on the at least one side surface.
机译:一种用于制造具有沉积在台面结构的侧面周围的第一电触点的发光二极管(LED)的方法。首先,形成材料层。材料层包括第一半导体层,第二半导体层以及在第一和第二半导体层之间的发光层,用于响应于电流通过发光层而产生光。形成的材料层被成形为包括底表面,顶表面和从底表面延伸到顶表面的至少一个侧面。顶表面的面积小于底表面的面积。电触点沉积在至少一个侧面上。

著录项

  • 公开/公告号US10418510B1

    专利类型

  • 公开/公告日2019-09-17

    原文格式PDF

  • 申请/专利权人 FACEBOOK TECHNOLOGIES LLC;

    申请/专利号US201715853505

  • 发明设计人 CELINE CLAIRE OYER;ALLAN POURCHET;

    申请日2017-12-22

  • 分类号H01L33;H01L33/38;H01L33/06;

  • 国家 US

  • 入库时间 2022-08-21 12:16:54

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