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MESA SHAPED MICRO LIGHT EMITTING DIODE WITH BOTTOM N-CONTACT

机译:底部具有N触点的MESA形微发光二极管

摘要

A light emitting diode (LED) with a first electrical contact at the top of the LED and a second electrical contact at the bottom of the LED. Layers of materials are formed on a substrate. The layers of materials include a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first and second semiconductor layers for producing light responsive to passing current through the light emitting layer. The formed layers of material are shaped into at least one semiconductor structure. A first electrical contact is formed on a top of the semiconductor structure, and a second electrical contact is formed at a bottom of the semiconductor structure. The second electrical contact is at least partially transparent.
机译:一种发光二极管(LED),其第一电触点在LED的顶部,第二电触点在LED的底部。在基板上形成材料层。材料层包括第一半导体层,第二半导体层以及在第一和第二半导体层之间的发光层,用于响应于电流通过发光层而产生光。形成的材料层被成形为至少一个半导体结构。在半导体结构的顶部上形成第一电接触,并且在半导体结构的底部上形成第二电接触。第二电触点是至少部分透明的。

著录项

  • 公开/公告号WO2019067182A3

    专利类型

  • 公开/公告日2019-05-09

    原文格式PDF

  • 申请/专利权人 FACEBOOK TECHNOLOGIES LLC;

    申请/专利号WO2018US49962

  • 发明设计人 OYER CELINE CLAIRE;

    申请日2018-09-07

  • 分类号H01L33/10;H01L25/075;H01L25/16;H01L33;H01L33/06;H01L33/20;H01L33/24;H01L33/32;H01L33/42;

  • 国家 WO

  • 入库时间 2022-08-21 11:55:23

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