Method of electrical reconfigurability and an electrical reconfigurable logic gate device instrinsically enabled by spin-orbit materials

摘要

An integrated logic device includes a channel having an interconnect section and a pair of spin-orbit segments connected to the interconnect section at either end of the interconnect section. A P structure includes a P magnet disposed on a surface of a spin-orbit segment. A tunneling barrier is disposed between the P magnet and a Rp magnetic reference layer. A Q structure includes a Q magnet disposed on a surface of the other spin-orbit segment. A tunneling barrier is disposed between the Q magnet and a Rq magnetic reference layer. A method of integrated logic spin-orbit perpendicular-anisotropy (SOPE) gate device operation is also described.