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Integrated photonic device comprising hollowed silicon substrate-based LED and optical waveguide and manufacturing method thereof
Integrated photonic device comprising hollowed silicon substrate-based LED and optical waveguide and manufacturing method thereof
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机译:包括中空的基于硅衬底的led和光波导的集成光子器件及其制造方法
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摘要
By using various anisotropic silicon etching techniques, a silicon substrate layer (1) and an epitaxial buffer layer (2) under the device structure are removed to obtain a monolithic photonic integration of silicon substrate suspended light-emitting diode (LED) with optical waveguide, and an ultra-thin device monolithically integrated with a suspended LED and an optical waveguide is obtained by further using the nitride back thinning etching technique. Therefore, internal loss of the LED is reduced and light emitting efficiency is improved. In the device according to the present disclosure, the light source and the optical waveguide are integrated on the same wafer, which solves the problem of monolithic integration of planar photons, enables the light emitted by the LED to be transmitted along the optical waveguide, addresses the problem of transmission of light in the optical waveguide, and implements the function of transmitting light within a plane.
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