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Memory device, and data processing method based on multi-layer RRAM crossbar array
Memory device, and data processing method based on multi-layer RRAM crossbar array
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机译:基于多层rram交叉开关阵列的存储装置及数据处理方法
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摘要
Embodiments of the present disclosure provide a memory device. The memory device includes an RRAM crossbar array that is configured to perform a logic operation, and resistance values of resistors in the RRAM crossbar array are all set to Ron or Roff to indicate a value 1 or 0. Based on the foregoing setting, an operation is implemented using the RRAM crossbar array, so that reliability of a logic operation of the RRAM crossbar array can be improved.
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机译:本公开的实施例提供一种存储装置。该存储设备包括配置为执行逻辑运算的RRAM交叉开关阵列,并且RRAM交叉开关阵列中的电阻器的电阻值全部设置为R on Sub>或R off Sub>表示值为1或0。基于上述设置,使用RRAM交叉开关阵列实现运算,从而可以提高RRAM交叉开关阵列的逻辑运算的可靠性。
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