A multiple-write enabled flash memory system, comprising: a flash memory comprising at least two planes, wherein each plane comprises multiple blocks, and wherein each block comprises multiple pages; an FTL memory manager configured: to reference one or more clean active blocks on each plane for a first write, wherein the first-write comprises writing one logical page of unmodified data to one physical page, and to reference one or more recycled active block on each plane for a second write, wherein each page of each recycled active block stores data from a previous first-write; and an encoder configured to encode a page of data via a write-once-memory (WOM) code to produce WOM-encoded data, wherein a combination of a target page of each recycled active block is configured to store the WOM-encoded data via a second write.
展开▼
