首页> 外国专利> Testing a semiconductor device including a voltage detection circuit and temperature detection circuit that can be used to generate read assist and/or write assist in an SRAM circuit portion and method therefor

Testing a semiconductor device including a voltage detection circuit and temperature detection circuit that can be used to generate read assist and/or write assist in an SRAM circuit portion and method therefor

机译:测试包括电压检测电路和温度检测电路的半导体器件及其方法,该电压检测电路和温度检测电路可用于在SRAM电路部分中产生读辅助和/或写辅助

摘要

A method of operating a semiconductor device that has a normal mode of operation and a test mode of operation, can include: generating at least one assist signal in the normal mode of operation wherein, when the at least one assist signal has a first assist logic level, the at least one assist signal alters a read operation or a write operation to a static random access memory (SRAM) cell as compared to operations without the assist signal, and inhibiting the generation of the at least one assist signal in the test mode of operation, the at least one assist signal has a second assist logic level when inhibited from being generated.
机译:一种具有正常操作模式和测试操作模式的半导体器件的操作方法,可以包括:在正常操作模式下产生至少一个辅助信号,其中,当至少一个辅助信号具有第一辅助逻辑时与没有该辅助信号的操作相比,该至少一个辅助信号改变了对静态随机存取存储器(SRAM)单元的读取操作或写入操作,并且在测试模式下抑制了至少一个辅助信号的产生在操作上,至少一个辅助信号在被禁止产生时具有第二辅助逻辑电平。

著录项

  • 公开/公告号US10403384B2

    专利类型

  • 公开/公告日2019-09-03

    原文格式PDF

  • 申请/专利权人 DARRYL G. WALKER;

    申请/专利号US201715628589

  • 发明设计人 DARRYL G. WALKER;

    申请日2017-06-20

  • 分类号G11C7;G11C29/12;G11C7/22;H01L29/78;G11C7/04;G11C11/419;G11C29/02;G11C29/14;G11C29/16;G11C29/46;G11C29/48;G11C29/50;G11C7/06;G11C7/10;G11C7/12;G11C7/14;G11C8/08;G11C29/04;

  • 国家 US

  • 入库时间 2022-08-21 12:13:18

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