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Field effect transistor, memory element and manufacturing method of charge storage structure using paraelectric and ferroelectric material
Field effect transistor, memory element and manufacturing method of charge storage structure using paraelectric and ferroelectric material
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机译:使用顺电和铁电材料的场效应晶体管,存储元件和电荷存储结构的制造方法
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摘要
A field effect transistor, a memory element, and a manufacturing method of a charge storage structure are provided. The memory element includes a plurality of field effect transistors, and each of the field effect transistors includes a substrate, a source region, a drain region, a gate conductive layer, and a charge storage structure. Both the source region and the drain region are located in the substrate and connected to an upper surface of the substrate. The source and drain regions are spaced apart from each other to define a channel region therebetween. The gate conductive layer is disposed over the upper surface and overlaps with the channel region. The charge storage structure disposed between the gate conductive layer and the channel region includes a ferroelectric material and a paraelectric material so that the charge storage structure has better capability of trapping charges and a higher switching speed.
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