Write algorithm for memory to reduce failure rate of write operations

摘要

A method for verifying a write operation in a memory cell (e.g., a non-volatile memory cell) that includes performing a first read operation of the memory cell to measure a first current associated with the memory cell and comparing the measured first current associated with the memory cell to a first predetermined threshold current to determine whether the write operation changed the state of the memory cell. If the measured first current associated with the memory cell indicates the write operation did change the state of the memory cell the method further includes performing a second read operation of the memory cell to measure a second current associated with the memory cell and comparing the measured second current associated with the memory cell to a second predetermined threshold current to determine whether the write operation changed the state of the memory cell to the desired state or an intermediate state.