首页>
外国专利>
Robust high performance low hydrogen silicon carbon nitride (SiCNH) dielectrics for nano electronic devices
Robust high performance low hydrogen silicon carbon nitride (SiCNH) dielectrics for nano electronic devices
展开▼
机译:用于纳米电子设备的坚固耐用的高性能低氢硅碳氮化物(SiCNH)电介质
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for depositing a dielectric layer that includes introducing a substrate into a process chamber of a deposition tool; and heating the substrate to a process temperature. The method may further include introducing precursors that include at least one dielectric providing gas species for a deposited layer and at least one hydrogen precursor gas into the process chamber of the deposition tool. The hydrogen precursor gas is introduced to the deposition chamber at a flow rate ranging from 50 sccm to 5000 sccm. The molar ratio for Hydrogen/Silicon gas precursor can be equal or greater than 0.05.
展开▼