Metal-insulator-semiconductor (MIS) contacts and method of forming

摘要

A semiconductor device containing a metal-insulator-semiconductor (MIS) contact and method of forming are described. The method includes providing a semiconductor substrate containing a contact region, depositing an insulator film on the contact region, the insulator film including a mixed oxide material containing TiO₂ and at least one additional metal oxide. The method further includes depositing a metal-containing electrode layer abutting the insulator film to form a MIS structure, and heat-treating the MIS structure to scavenge oxygen from the TiO₂ to the metal-containing electrode layer to form a MIS contact with oxygen vacancies in the TiO₂. According to one embodiment the at least one additional metal oxide is selected from HfO₂, ZrO₂, Al₂O₃, and combinations thereof, and the metal-containing electrode layer is selected from the group consisting of Ti metal, Al metal, Hf metal, Zr metal, Ta metal, Nb metal, and a combination thereof.