首页> 外国专利> Stacked photodiode multispectral imager having an electrode layer shareable by a non-visible pixel layer and a multicolored pixel layer

Stacked photodiode multispectral imager having an electrode layer shareable by a non-visible pixel layer and a multicolored pixel layer

机译:具有电极层可被不可见像素层和彩色像素层共享的堆叠光电二极管多光谱成像器

摘要

A photodiode architecture comprises first, second, and third independent photodiodes, and a shared electrode. The first, second, and third photodiodes are each connected to respective sources of bias voltage and to a common shared electrode, whereby the photodiode architecture comprises at least one of a shared anode and shared cathode photodiode architecture. The photodiode architecture selectively reverse biases the first, second, and third photodiodes so that, during operation, at least one of the first, second and third photodiodes is always operating in a photoconducting mode, to enable capture and storage of charge from any photodiode in the architecture operating in photoconducting mode. Advantageously, the first photodiode can be configured to respond to a first wavelength of light and at least one of the second and third photodiodes can be configured to be responsive to a respective second or third wavelength of light shorter than the first wavelength of light.
机译:光电二极管架构包括第一,第二和第三独立光电二极管以及共享电极。第一,第二和第三光电二极管分别连接到偏置电压的源和公共共享电极,由此光电二极管结构包括共享阳极和共享阴极光电二极管结构中的至少一个。光电二极管体系结构选择性地对第一,第二和第三光电二极管进行反向偏置,以便在运行期间,第一,第二和第三光电二极管中的至少一个始终以光电导模式运行,以实现从任何光电二极管捕获和存储电荷。在光电导模式下运行的架构。有利地,第一光电二极管可以被配置为响应于光的第一波长,并且第二和第三光电二极管中的至少一个可以被配置为响应于比第一波长的光短的相应的第二或第三波长的光。

著录项

  • 公开/公告号US10134799B2

    专利类型

  • 公开/公告日2018-11-20

    原文格式PDF

  • 申请/专利权人 INTRINSIX CORP.;

    申请/专利号US201715417951

  • 发明设计人 EUGENE M. PETILLI;

    申请日2017-01-27

  • 分类号H01L27/146;

  • 国家 US

  • 入库时间 2022-08-21 12:10:17

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