首页>
外国专利>
SYSTEM AND METHOD FOR IN-SITU PROGRAMMING AND READ OPERATION ADJUSTMENTS IN A NON-VOLATILE MEMORY
SYSTEM AND METHOD FOR IN-SITU PROGRAMMING AND READ OPERATION ADJUSTMENTS IN A NON-VOLATILE MEMORY
展开▼
机译:非挥发性存储器中原位编程和读取操作调整的系统和方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A circuit includes a detection circuit configured to determine a capacitance delay (RC-delay) in an initial stage of a read or program operation and to adjust timing for detecting data in a subsequent stage, or portion of a stage, of the same read or programing operation. In particular, during a program operation a detection circuit may be configured to detect a pre-charge time for a bit line and adjust a timing of subsequent verify stages of the bit line during the same program operation based on the detected pre-charge time. Additionally, a word line circuit may be configured to detect a pre-charge time for a word line during an initial stage of a read operation and adjust read timing for a subsequent portion of the same read stage, or subsequent read stage of the read operation based on the detected word line pre-charge time.
展开▼