A microelectronic circuit structure comprises a stack of bonded layers comprising a bottom layer and at least one upper layer. At least one of the upper layers comprises an oxide layer having a back surface and a front surface closer to the bottom layer than the back surface, and a plurality of FD-SOI transistors built on the front surface. At least a first back gate line and a second back gate line extend separate from each other above the back surface for independently providing a first back gate bias to a first group of transistors and a second back gate bias to a second different group of transistors.
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