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QCL WITH WIDE ACTIVE REGION AND THINNED STAGES AND RELATED METHODS

机译:具有广泛活动区域和薄阶段的QCL及其相关方法

摘要

A QCL may include a substrate, and a semiconductor layer adjacent the substrate and defining an active region. The active region may have an elongate shape extending laterally across the substrate and having a number of stages greater than 25, each stage having a thickness less than 40 nanometers. The active region may have a ridge width greater than 15 μm.
机译:QCL可以包括衬底以及与该衬底相邻并限定有源区的半导体层。有源区可具有横向于基板横向延伸的细长形状,并具有大于25的多个级,每个级的厚度小于40纳米。有源区可以具有大于15μm的脊宽。

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