HEXAGONAL PHASE EPITAXIAL CADMIUM SULFIDE ON COPPER INDIUM GALLIUM SELENIDE FOR A PHOTOVOLTAIC JUNCTION

摘要

A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.