DETERMINISTIC READ DISTURB COUNTER-BASED DATA CHECKING FOR NAND FLASH

摘要

A data storage device comprises a non-volatile semiconductor memory device and a solid-state drive controller communicatively coupled to the non-volatile semiconductor memory device. The non-volatile semiconductor memory device can store data in memory blocks. The solid-state drive controller can, periodically, retrieve counts from a counter table, select a predetermined number of memory blocks corresponding to the lowest counts, and determine an integrity of the stored data in each of the predetermined number of memory blocks. Each count can correspond to a difference between a count limit and a number of read operations performed on one of the memory blocks.