PREPARATION METHOD OF BOTTOM-GATE TYPE LOW-TEMPERATURE POLYSILICON TRANSISTOR

摘要

A preparation method of a bottom-gate type low-temperature polysilicon transistor is disclosed in the present disclosure. The preparation method includes: preparing a first stack structure on a substrate; preparing a polysilicon layer and an etch stop layer in sequence on the first stack structure; patterning the polysilicon layer and the etch stop layer at the same time so that the etch stop layer covers portions of the polysilicon layer; implanting ions into the polysilicon layer that is not covered by the etch stop layer to form a source/drain region of the low-temperature polysilicon transistor. In this way, the present disclosure can simplify the manufacturing process and save the manufacturing cost.