POWER SEMICONDUCTOR DEVICE WITH OPTIMIZED FIELD-PLATE DESIGN

摘要

A power semiconductor device and method for making same are disclosed. The device includes a source bonding pad and a drain bonding pad, a drain metallization structure including a drain field plate connected to the drain bonding pad, and a source metallization structure comprising a source field plate connected to the source bonding pad. At least a portion of at least one of the bonding pads is situated directly over an active area. A dimension of at least one of the field plates varies depending upon the structure adjacent to the field plate.