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INTEGRATED CIRCUIT STRUCTURE INCLUDING DEEP N-WELL SELF-ALIGNED WITH STI AND METHOD OF FORMING SAME
INTEGRATED CIRCUIT STRUCTURE INCLUDING DEEP N-WELL SELF-ALIGNED WITH STI AND METHOD OF FORMING SAME
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机译:带有STI自对准深N阱的集成电路结构及其形成方法
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摘要
The disclosure is directed to integrated circuit (IC) structures, and more particularly, to IC structures including a deep n-well that is self-aligned with a shallow trench isolation (STI). The integrated circuit structure may include: a first pair of isolation regions within a substrate; a first region of the substrate between the first pair of isolation regions having a first conductivity type; a second region of the substrate beneath the first pair of isolation regions and the first region of the substrate having a second conductivity type opposite the first conductivity type of the first region of the substrate, wherein the second region of the substrate includes a second pair of isolation regions that are self-aligned with and in contact with the first pair of isolation regions.
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