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MAGNETIC MEMORY DEVICES BASED ON 4D AND 5D TRANSITION METAL PEROVSKITES

机译：基于4D和5D过渡金属钙钛矿的磁存储设备

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摘要

Magnetic switching devices, including magnetic memory devices, are provided. The devices use high-quality crystalline films of 4d or 5d transition metal perovskite having a strong spin-orbit coupling (SOC) to produce spin-orbit torque in adjacent ferromagnetic materials via a strong spin-Hall effect.

机译：提供了包括磁性存储装置的磁性开关装置。该设备使用具有强自旋轨道耦合（SOC）的4d或5d过渡金属钙钛矿的高质量结晶膜，通过强自旋霍尔效应在相邻的铁磁材料中产生自旋轨道扭矩。

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公开/公告号US2019006581A1

专利类型
公开/公告日2019-01-03

原文格式PDF
申请/专利权人 WISCONSIN ALUMNI RESEARCH FOUNDATION;
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申请/专利号US201816019831
发明设计人 CHANG-BEOM EOM;TIANXIANG NAN;TREVOR JEFFREY ANDERSON;
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申请日2018-06-27
分类号H01L43/04;H01L43/10;H01L43/14;G11C11/16;G11C11/18;
国家 US
入库时间 2022-08-21 12:06:07

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