BROADBAND TUNABLE THZ WAVE MANIPULATOR AND THE METHOD TO FORM THE SAME

摘要

A semiconductor device includes a semiconductor substrate having a metasurface layer configured with multiple pairs of finger portions in a repeating arrangement. The multiple pairs of finger portions are electrically configurable to modulate a radiation signal received by the semiconductor device. Each pair of finger portions includes first and second members where the first member is doped with a first dopant and the second member is doped with a second dopant being different to the first dopant. Any two adjacent first or second members are configured to be separated by at least deep subwavelength to enable the repeating arrangement.