A BROADBAND TUNABLE THZ WAVE MANIPULATOR AND THE METHOD TO FORM THE SAME

摘要

A BROADBAND TUNABLE THZ WAVE MANIPULATOR AND THE METHOD TO FORM THE SAME 5 This invention relates to semiconductor device comprising a semiconductor substrate having a metasurface layer configured with multiple pairs of finger portions in a repeating arrangement. The multiple pairs of finger portions are electrically configurable to modulate a radiation signal received by the semiconductor device. Each pair of finger 10 portions comprises first and second members where the first member is doped with a first dopant and the second member is doped with a second dopant being different to the first dopant. Any two adjacent first or second members are configured to be separated by at least deep subwavelength to enable the repeating arrangement. 15 Figure 2a