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HIGH SPEED WAVEGUIDE INTEGRATED GE-BASED PHOTODIODE DESIGN FOR SILICON PHOTONICS
HIGH SPEED WAVEGUIDE INTEGRATED GE-BASED PHOTODIODE DESIGN FOR SILICON PHOTONICS
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机译:硅光子的高速波导集成GE基光电二极管设计
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摘要
Methods of increasing the optical path length and bandwidth of a Ge-based photodiode while reducing the diode area and capacitance without compromising the optical responsivity and the resulting devices are provided. Embodiments include providing a Si substrate having a BOX layer over the Si substrate and a Si layer over the BOX layer; forming an oxide layer over the Si layer; forming a trench in the oxide layer, the trench having a center strip and a plurality of opposing fins; epitaxially growing Ge in the trench and above the oxide layer; and removing the oxide layer, a Ge center strip and a plurality of opposing fins remaining.
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