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METHOD OF CONTROLLING A TEMPERATURE OF A CHEMICAL MECHANICAL POLISHING PROCESS, TEMPERATURE CONTROL, AND CMP APPARATUS INCLUDING THE TEMPERATURE CONTROL

机译:化学机械抛光过程的温度控制方法,温度控制以及包括该温度控制的CMP装置

摘要

A method of controlling a chemical mechanical polishing (CMP) process, a temperature control, and a CMP apparatus, the method including measuring actual temperatures of at least two regions in a platen in real time during the CMP process in which a polishing pad attached to the platen polishes a substrate held by a polishing head using slurry and deionized water; receiving the measured actual temperatures of the regions; and individually controlling the actual temperatures of the regions in real time during the CMP process to provide the regions with a predetermined set CMP process temperature.
机译:一种控制化学机械抛光(CMP)过程的方法,温度控制和CMP设备,该方法包括在CMP过程中实时测量压板中至少两个区域的实际温度,在该过程中,抛光垫附着压板使用浆料和去离子水对由抛光头保持的基板进行抛光。接收测得的区域实际温度;在CMP工艺过程中,实时实时地分别控制区域的实际温度,从而为区域提供预定的CMP工艺温度设定值。

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