首页> 外国专利> SURFACE ACOUSTIC WAVE DEVICE HAVING A PIEZOELECTRIC LAYER ON A QUARTZ SUBSTRATE AND METHODS OF MANUFACTURING THEREOF

SURFACE ACOUSTIC WAVE DEVICE HAVING A PIEZOELECTRIC LAYER ON A QUARTZ SUBSTRATE AND METHODS OF MANUFACTURING THEREOF

机译:在石英基板上具有压电层的表面声波器件及其制造方法

摘要

Embodiments of a Surface Acoustic Wave (SAW) device and methods of fabrication thereof are disclosed. In some embodiments, a SAW device includes a quartz carrier substrate, a piezoelectric layer on a surface of the quartz carrier substrate, and at least one interdigitated transducer on a surface of the piezoelectric layer opposite the quartz carrier substrate, wherein a thickness of the piezoelectric layer is less than twice a transducer electrode period of the at least one interdigitated transducer. Using the piezoelectric layer on the carrier substrate suppresses acoustic radiation into the bulk, thereby improving the performance of the SAW device. Further, by utilizing quartz for the carrier substrate, additional advantages of small viscous losses, small permittivity, and small thermal sensitivity are achieved. Still further, as compared to Silicon, the use of quartz for the carrier substrate eliminates resistive losses.
机译:公开了表面声波(SAW)装置的实施方式及其制造方法。在一些实施例中,一种声表面波器件包括石英载体衬底,在石英载体衬底的表面上的压电层,以及在与石英载体衬底相对的压电层的表面上的至少一个叉指换能器,其中压电体的厚度层的厚度小于至少一个叉指式换能器的换能器电极周期的两倍。在载体基板上使用压电层可抑制声辐射进入主体,从而改善SAW器件的性能。此外,通过将石英用于载体衬底,获得了粘性损失小,介电常数小和热敏度小的优点。更进一步,与硅相比,将石英用于载体衬底消除了电阻损耗。

著录项

  • 公开/公告号US2018337654A1

    专利类型

  • 公开/公告日2018-11-22

    原文格式PDF

  • 申请/专利权人 QORVO US INC.;

    申请/专利号US201816048520

  • 发明设计人 MARC SOLAL;SHOGO INOUE;

    申请日2018-07-30

  • 分类号H03H9/02;H03H9/64;H03H9/56;H03H3/007;H03H3/08;

  • 国家 US

  • 入库时间 2022-08-21 12:05:07

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号