Ag UNDERLAYER- ATTACHED METALLIC MEMBER, Ag UNDERLAYER- ATTACHED INSULATING CIRCUIT SUBSTRATE,SEMICONDUCTOR DEVICE, HEAT SINK- ATTACHED INSULATING CIRCUIT SUBSTRATE, AND METHOD FOR MANUFACTURING Ag UNDERLAYER-ATTACHED METALLIC MEMBER

摘要

An Ag underlayer-attached metallic member includes a metallic member joined with a body to be joined and an Ag underlayer formed on a joining surface of the metallic member with the body to be joined, the Ag underlayer includes a glass layer formed on a metallic member side and an Ag layer laminated on the glass layer, and an area proportion of voids in an Ag layer surface of the Ag underlayer is 25% or less.