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CONDITIONING REMOTE PLASMA SOURCE FOR ENHANCED PERFORMANCE HAVING REPEATABLE ETCH AND DEPOSITION RATES
CONDITIONING REMOTE PLASMA SOURCE FOR ENHANCED PERFORMANCE HAVING REPEATABLE ETCH AND DEPOSITION RATES
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机译:具有可重复蚀刻和沉积速率的远程等离子体源,可提高性能
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摘要
Embodiments of the present disclosure generally relate to methods for conditioning an interior wall surface of a remote plasma generator. In one embodiment, a method for processing a substrate is provided. The method includes exposing an interior wall surface of a remote plasma source to a conditioning gas that is in excited state to passivate the interior wall surface of the remote plasma source, wherein the remote plasma source is coupled through a conduit to a processing chamber in which a substrate is disposed, and the conditioning gas comprises an oxygen-containing gas, a nitrogen-containing gas, or a combination thereof. The method has been observed to be able to improve dissociation/recombination rate and plasma coupling efficiency in the processing chamber, and therefore provides repeatable and stable plasma source performance from wafer to wafer.
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