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Resistive memories based on graphene doped with transition metals
Resistive memories based on graphene doped with transition metals
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机译：基于掺杂过渡金属的石墨烯的电阻式存储器
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摘要
The new structure of resistive memory device for application in industry of semiconductor devices, microelectronics, computer neuromórfica and electronics in general.Which is based on graphene doped with transition metals; it is a device that takes as a basis the graphene oxide (go) with structure ITO / CuO / go / CuO / Al.The present device manufactured by dip coating technique.Containing layers of memory with specific structure type: ITO / CuO / go + 1% Ag / CuO / Al, Al / CuO / go + 1% Ag / CuO / Al; ITO / go + 1% Ag / Al; ITO / CuO / go + 0.1% Ag / CuO / Al; ITO / go + 0.1% Ag / Al; ITO / CuO / go + 1% Cu / CuO / Al; ITO / CuO / go + 1% Fe / CuO / Al and ITO / go + 1% Cu / Al.
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机译：电阻存储器件的新结构，广泛应用于半导体器件，微电子学，计算机神经病学和电子学等行业。它是一种以结构为ITO / CuO / go / CuO / Al的氧化石墨烯（go）为基础的器件。本器件采用浸涂技术制造。包含特定结构类型的存储器层：ITO / CuO / go + 1％Ag / CuO / Al，Al / CuO / go + 1％Ag / CuO / Al; ITO /去+ 1％Ag // Al; ITO / CuO / + 0.1％Ag / CuO / Al; ITO /去+ 0.1％Ag // Al; ITO / CuO /去+ 1％Cu / CuO / Al; ITO / CuO / + 1％Fe / CuO / Al和ITO / 1 + Cu / Al。
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