Structure of a two-colour electro-luminescent diode and method for producing of the two-colour electro-luminescent diode structure

摘要

The purpose of the notification is the structure of the two -colour electroluminescent diode (LED) based on the p -n connection and the way in which the two -colour electroluminescent diode structure is constructed.This structure has an n -GaN substrate, or a n -GaN substrate with a metal contact,in which it is unmixed or mixed with a type p buffer layer ZnO of 3 -50 nm thickness.The buffer layer, on the other hand, is mixed with arsenic and /or antimony and /or nitrogen with an appropriate layer of p -ZnO of 50 -5000 nm thickness with a second metal contact.This means that the substrate or the w -GaN layer with molecular beam epitaxy (MBE) is first carried out at a rate.350 -500 -C increase of the ZnO buffer layer, then the substrate is heated with this layer and only the mixed As and /or Sb and /or N of the appropriate p -ZnO layer is increased.Metallic contacts are made after this layer has been deposited and the structure is reheated.