首页> 外国专利> RAPID PULSE ANNEALING OF CDZNTE DETECTORS FOR REDUCING ELECTRONIC NOISE

RAPID PULSE ANNEALING OF CDZNTE DETECTORS FOR REDUCING ELECTRONIC NOISE

机译:CDZNTE检测器的快速脉冲退火技术,可降低电子噪声

摘要

A combination of doping, rapid pulsed optical and/or thermal annealing, and unique detector structure reduces or eliminates sources of electronic noise in a CdZnTe (CZT) detector. According to several embodiments, methods of forming a detector exhibiting minimal electronic noise include: pulse-annealing at least one surface of a detector comprising CZT for one or more pulses, each pulse having a duration of ~0.1 seconds or less. The surface(s) may optionally be ion-implanted. In another embodiment, a CZT detector includes a detector surface with two or more electrodes operating at different electric potentials and coupled to the detector surface; and one or more ion-implanted CZT surfaces on or in the detector surface, each of the one or more ion-implanted CZT surfaces being independently connected to one of the electrodes and the surface of the detector. At least two of the ion-implanted surfaces are in electrical contact.
机译:掺杂,快速脉冲光学和/或热退火以及独特的检测器结构相结合,可以减少或消除CdZnTe(CZT)检测器中的电子噪声源。根据几个实施例,形成表现出最小的电子噪声的检测器的方法包括:对包括CZT的检测器的至少一个表面进行脉冲退火一个或多个脉冲,每个脉冲的持续时间为〜0.1秒或更短。所述表面可以任选地被离子注入。在另一个实施例中,CZT检测器包括检测器表面,该检测器表面具有在不同电势下操作并耦合到该检测器表面的两个或更多个电极。以及在检测器表面上或之中的一个或多个离子注入的CZT表面,一个或多个离子注入的CZT表面中的每一个独立地连接到电极之一和检测器表面。至少两个离子注入表面电接触。

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