SEMICONDUCTOR CHIP WITH TRANSPARENT CURRENT SPREADING LAYER

摘要

The invention relates to a semiconductor chip (10) with a radiation-permeable support (1), a semiconductor body (2) and a transparent current spreading layer (3), wherein the semiconductor body has an n-sided semiconductor layer, a p-sided semiconductor layer (22) and an optically active area (23) therebetween. The semiconductor body is secured to the support by means of a radiation permeable connection layer (5). The current spreading layer is based on zinc selenide and is adjacent to the n-sided semiconductor layer. The invention also relates to a method for producing said type of semiconductor chip.