METHODS FOR IMPROVING PERFORMANCE IN HAFNIUM OXIDE-BASED FERROELECTRIC MATERIAL USING PLASMA AND/OR THERMAL TREATMENT

摘要

A method of forming ferroelectric hafnium oxide (HfO₂) in a substrate processing system includes arranging a substrate within a processing chamber of the substrate processing system, depositing an HfO₂ layer on the substrate, performing a plasma treatment of the HfO₂ layer, and annealing the HfO₂ layer to form ferroelectric hafnium HfO₂.