Disclosed by the present invention is a carbon nano-material composite structure-based three-dimensional silicon through-hole vertical interconnection method: fabricating silicon holes on a silicon substrate; depositing an insulating layer on a surface of the silicon substrate and an inner wall of the silicon holes; depositing a blocking layer on the insulating layer, and depositing a catalytic metal layer on the blocking layer; etching the catalytic metal layer to form catalytic nano-particles; using the catalytic nano-particles to grow a carbon nano-material composite layer; attaching a dry film on a surface of the carbon nano-material composite layer on the silicon substrate, exposing and developing to form a dry film layer; depositing a seed layer on a bottom surface of the silicon holes and a surface of the dry film layer; filling a conductive material into the silicon holes. The present invention uses the excellent thermal and mechanical performance of a carbon nano-material to solve the heat dissipation problem of a through silicon via (TSV) encapsulation structure that is caused by increased power density as well as the problem of thermal stress mismatch among encapsulation materials, thus improving the thermal conductivity and encapsulation reliability of a 3D-TSV structure.
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