STRUCTURE COMPRISING A SEMICONDUCTOR STRAINED-LAYER ON A HEAT SINK

摘要

The invention relates to a structure comprising, on a semiconductor substrate (5), a section (3) of a semiconductor layer or stack of semiconductor layers comprising germanium, and a layer of silicon nitride (7) which surrounds and applies a strain to said section (3), wherein the semiconductor substrate (5) is separated from the silicon nitride layer (7) by means of a metal leg (22).