COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR COMPATIBLE PATTERNING OF SUPERCONDUCTING NANOWIRE SINGLE-PHOTON DETECTORS

摘要

A device includes a first semiconductor oxide layer (204); a portion of a semiconductor layer (206a) disposed on the first semiconductor oxide layer (204); and a second semiconductor oxide layer (208) including a first region disposed on the portion of the semiconductor layer and a second region disposed on the first semiconductor oxide layer. A thickness of the first region is less than a predefined thickness. The device also includes an etch stop layer (210) disposed on the second semiconductor oxide layer; a plurality of distinct portions of a third semiconductor oxide layer (212) disposed on the etch stop layer and exposing one or more distinct portions of the etch stop layer over the semiconductor portion; and a plurality of distinct portions of a superconducting layer (214) disposed on the plurality of distinct portions of the third semiconductor oxide layer and the exposed one or more distinct portions of the etch stop layer.