首页> 外国专利> 2×2 ARRAY ARRANGEMENT BASED ON COMPOSITE DIELECTRIC GRATING LIGHT-SENSITIVE DETECTOR AND WORKING METHOD

2×2 ARRAY ARRANGEMENT BASED ON COMPOSITE DIELECTRIC GRATING LIGHT-SENSITIVE DETECTOR AND WORKING METHOD

机译:基于复合介电光栅光敏检测器的2×2阵列布置及工作方法

摘要

Disclosed in the present invention are a 2×2 array arrangement based on a composite dielectric grating light-sensitive detector and a working method. An array consists of four pixels, and each pixel comprises a light-sensitive transistor and a read transistor, which are formed above a p-type semiconductor substrate and use a composite dielectric grating structure; the substrates of four read transistors are connected to form a regular octagon ring structure and located in the center of the array; in four sides of the regular octagon ring structure, the substrates that are not covered with a composite dielectric grating form four heavily doped N+ regions, of which every two regions are opposite to each other, forming right angles, wherein two opposite heavily doped N+ regions are connected to each other to form a shared N+ source, and the other two are connected to each other to form a shared N+ drain; four light-sensitive transistors are located at the outer side of the regular octagon ring structure and located at the sides of four regions that are not heavily n-doped. The present invention can significantly improve the filling coefficient of the light-sensitive detector, achieves a high full-well charge capacity, is compatible with floating gate CMOS process, and is easy to implement.
机译:本发明公开了一种基于复合介电光栅光敏检测器的2×2阵列布置及其工作方法。阵列由四个像素组成,每个像素包括光敏晶体管和读取晶体管,它们形成在p型半导体衬底上方并使用复合介质光栅结构。四个读取晶体管的基板连接形成规则的八边形的环形结构,并位于阵列的中心。在正八边形环结构的四个侧面中,未被复合介质光栅覆盖的衬底形成四个重掺杂的N +区域,其中每两个区域彼此相对,形成直角,其中两个相对的重掺杂的N +区域彼此连接形成共享的N +源极,另两个相互连接形成共享的N +漏极。四个光敏晶体管位于正八边形环结构的外侧,并且位于四个未重n掺杂的区域的侧面。本发明可以显着提高光敏检测器的填充系数,实现高的全阱电荷容量,与浮栅CMOS工艺兼容,并且易于实现。

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