FILTER LAYER FOR AN IN-PLANE TOP SYNTHETIC ANTIFERROMAGNET (SAF) STACK FOR A SPIN ORBIT TORQUE (SOT) MEMORY

摘要

A memory device comprises an interconnect having a spin orbit torque (SOT) material. A magnetic tunnel junction (MTJ) device comprises a free layer magnet coupled to the interconnect, a reference fixed magnet, and a barrier material between the free layer magnet and the reference fixed magnet. A material stack is on the MTJ device, wherein the material stack comprises a spacer material, a pinned fixed magnet, an antiferromagnet, and a multilayer filter located within the material stack, wherein the multilayer filter is configured to reduce effects of manganese diffusion from the antiferromagnet.