Spin-Orbit-Torque Memory Operation of Synthetic Antiferromagnets

摘要

In this Letter, we show the demonstration of a sequential antiferromagnetic memory operation with a spin-orbit-torque write, by the spin Hall effect, and a resistive read in the CoGd synthetic antiferromagnetic bits, in which we reveal the distinct differences in the spin-orbit-torque and field-induced switching mechanisms of the antiferromagnetic moment, or the Neel vector. In addition to the comprehensive spin torque memory operation, our thorough investigations also highlight the high immunity to a field disturbance as well as a memristive behavior of the antiferromagnetic bits.