INTERFACE ENGINEERING OF A PERPENDICULAR MAGNETIC TUNNEL JUNCTION (PMTJ) STACK TO IMPROVE RETENTION LOSS AT HIGHER TEMPERATURE

摘要

A memory device comprises a perpendicular magnetic tunnel junction (PMTJ) stack disposed above a substrate. The PMTJ stack has a first free layer magnet, a reference fixed magnet, and a barrier material between the first free layer magnet and the reference fixed magnet. A material stack is on the PMTJ device, where the material stack comprises a first cap material, a second free layer magnet, and a perpendicular magnetic anisotropy (PMA) booster material to increase PMA of the PMTJ stack.