首页> 外国专利> - INSULATOR-TO-METAL TRANSITION DEVICE METHOD OF MANUFACTURING THE SAME AND AN APPLICATION INCLUDING THE SAME

- INSULATOR-TO-METAL TRANSITION DEVICE METHOD OF MANUFACTURING THE SAME AND AN APPLICATION INCLUDING THE SAME

机译:-制造相同的绝缘体到金属的过渡装置的方法及其应用

摘要

The present invention relates to an insulator-metal transition device, a method of manufacturing the same, and an application including the same. The insulator-metal transition device includes upper electrode and a lower electrode, a threshold switching film which is disposed between the upper electrode and the lower electrode and has an insulator-metal transition property, and a defect prevention film which is in contact with the threshold switching film and the upper electrode and the lower electrode and is formed on the surface of the threshold switching film. Higher schottky barrier energy can be formed between the threshold switching film and the electrode.
机译:绝缘体-金属过渡装置,其制造方法以及包括其的应用技术领域本发明涉及绝缘体-金属过渡装置,其制造方法以及包括该绝缘体-金属过渡装置的应用。该绝缘体-金属过渡装置包括:上部电极和下部电极;阈值切换膜,其设置在上部电极和下部电极之间,并且具有绝缘体-金属过渡性;以及防缺陷膜,其与阈值接触。开关膜以及上电极和下电极形成在阈值开关膜的表面上。在阈值开关膜和电极之间可以形成较高的肖特基势垒能。

著录项

  • 公开/公告号KR101911185B1

    专利类型

  • 公开/公告日2018-12-31

    原文格式PDF

  • 申请/专利权人 POSTECH ACADEMY-INDUSTRY FOUNDATION;

    申请/专利号KR1020170097858

  • 发明设计人 PARK JAE HYUK;HWANG HYUN SANG;

    申请日2017-08-01

  • 分类号H01L49;H01L21/285;

  • 国家 KR

  • 入库时间 2022-08-21 11:52:13

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号