Pb-free MEMRISTOR USING Pb-FREE ORGANIC-INORGANIC HYBRID PEROVSKITE

摘要

The present invention a memristor based on Pb-free stratified organic-inorganic hybrid perovskite, and a manufacturing method thereof. The memristor includes: a first electrode; a second electrode; and a layer containing the organic-inorganic hybrid perovskite or a switching layer containing the organic-inorganic hybrid perovskite. The layer containing the organic-inorganic hybrid perovskite or the switching layer containing the organic-inorganic hybrid perovskite is positioned between the first electrode and second electrode.