Compensation of threshold voltage fluctuations of memory cell components

摘要

Methods, systems and devices for operating ferroelectric memory cells or cells are described. Before reading a memory cell, the voltage on the access line of the memory cell may be initialized to a value associated with the threshold voltage of the switching component in electronic communication with the memory cell. The voltage can be initialized by decreasing the existing voltage on the access line to a value. A switching component or an additional pull-down device, or both, can be used to reduce the voltage on the access line. After the access line is initialized to a value, a read operation may be triggered.