PVD PVD PVD PROCESSING METHOD AND PVD PROCESSING APPARATUS

摘要

The present invention is to suppress generation of particles. Disclosed is a PVD processing method including a first process, a second process, a third process, and a fourth process. In the first process, an opening of a shield, which is provided among a first target containing a metal oxide as a main component, a second target containing a metal constituting the metal oxide as a main component, and a stage having a substrate, a film formation object, placed thereon, is made to coincide with the first target so as to expose the first target to the stage, and is brought close to the first target. In the second process, sputtering is performed by using the first target. In the third process, the opening is made to coincide with the second target so as to expose the second target to the stage, and is brought close to the second target. In the fourth process, sputtering is performed by using the second target.