ARRAY OF GRAPHENE QUNANTUM DOTS EMBEDDED IN HEXAGONAL BORON NITRIDE AND MANUFACTURING METHOD FOR THE SAME ELECTRONIC DEVICE COMPRISING FOR THE SAME

摘要

The present invention relates to the design of graphene quantum dots, and more particularly, to a thin film in which graphene quantum dots usable in various electronic devices are formed in hexagonal boron nitride and a manufacturing method thereof. The quantum dots formed in hexagonal boron nitride according to one side of the present invention, in s a thin film formed in a hexagonal boron nitride thin film, includes one or more graphene quantum dots (GQDs) where the sites of a plurality of adjacent nitrogen atoms and boron atoms (site) are substituted for the sites of carbon atoms. The graphene quantum dots can be applied to transistors, memory devices, optoelectronic devices, semiconductor devices.