High-efficiency electrode type solar cell, solar cell module, and solar power generation system

摘要

An impurity diffusion layer formed by diffusing an impurity of the second conductivity type on the back surface of the non-light-receiving surface of the semiconductor substrate of the first conductivity type; and an electrode connected to the impurity diffusion layer, The surface concentration of the impurity is not less than 5 × 10 ¹⁷ atoms / cm ^{3 and not} more than 5 × 10 ¹⁹ atoms / cm ³ , and the impurity diffusion depth of the impurity diffusion layer is not less than 1 μm and not more than 2.9 μm from the surface of the back surface of the substrate. Thereby, it is possible to provide a highly efficient back electrode type solar cell which can be manufactured at low cost by a simple method.